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HAT3004R silicon n channel / p channel power mos fet high speed power switching ade-208-500i (z) 10th. edition aug. 1997 features low on-resistance capable of 4 v gate drive low drive current high density mounting outline sop? 1 2 3 4 5 6 7 8 1, 3 source 2, 4 gate 5, 6, 7, 8 drain g d s d g d s d nch pch 1 2 78 4 5 6 3
HAT3004R 2 absolute maximum ratings (ta = 25?) item symbol ratings unit nch pch drain to source voltage v dss 30 ?0 v gate to source voltage v gss ?0 ?0 v drain current i d 5.5 ?.5 a drain peak current i d(pulse) note1 44 ?8 a body-drain diode reverse drain current i dr 5.5 ?.5 a channel dissipation pch note2 2w channel dissipation pch note3 3w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? note: 1. pw 10 m s, duty cycle 1 % 2. 1 drive operation : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s 3. 2 drive operation : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10s
HAT3004R 3 electrical characteristics (n channel) (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30v i d = 10ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 m a, v ds = 0 gate to source leak current i gss ?0 m av gs = ?6v, v ds = 0 zero gate voltege drain current i dss 10 m av ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 v v ds = 10v, i d = 1ma static drain to source on state r ds(on) 0.050 0.065 w i d = 3a, v gs = 10v note4 resistance r ds(on) 0.078 0.11 w i d = 3a, v gs = 4v note4 forward transfer admittance |y fs | 3.5 5.5 s i d = 3a, v ds = 10v note4 input capacitance ciss 310 pf v ds = 10v output capacitance coss 220 pf v gs = 0 reverse transfer capacitance crss 100 pf f = 1mhz turn-on delay time t d(on) 17 ns v gs = 4v, i d = 3a rise time t r 190 ns v dd ? 10v turn-off delay time t d(off) ?5ns fall time t f ?0ns body?rain diode forward voltage v df 0.9 1.4 v if = 5.5a, v gs = 0 note4 body?rain diode reverse recovery time t rr 50 ns if = 5.5a, v gs = 0 dif/ dt =20a/? note: 4. pulse test
HAT3004R 4 electrical characteristics (p channel) (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0ma, v gs = 0 gate to source breakdown voltage v (br)gss ?0 v i g = ?00 m a, v ds = 0 gate to source leak current i gss ?0 m av gs = ?6v, v ds = 0 zero gate voltege drain current i dss ?0 m av ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.5 v v ds = ?0v, i d = ?ma static drain to source on state r ds(on) 0.12 0.16 w i d = ?a, v gs = ?0v note5 resistance r ds(on) 0.20 0.34 w i d = ?a, v gs = ?v note5 forward transfer admittance |y fs | 2.5 3.5 s i d = ?a, v ds = ?0v note5 input capacitance ciss 350 pf v ds = ?0v output capacitance coss 230 pf v gs = 0 reverse transfer capacitance crss 75 pf f = 1mhz turn-on delay time t d(on) 18 ns v gs = ?v, i d = ?a rise time t r 110 ns v dd ? ?0v turn-off delay time t d(off) ?0 ns fall time t f ?0 ns body?rain diode forward voltage v df ?.0 ?.5 v if = ?.5a, v gs = 0 note5 body?rain diode reverse recovery time t rr 60 ns if = ?.5a, v gs = 0 dif/ dt =20a/? note: 5. pulse test
HAT3004R 5 main characteristics (n channel) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 20 16 12 8 4 0 246810 10v 20 16 12 8 4 0 2468 10 10 ? 100 ? 1 ms pw = 10 ms 8 v 6 v 4.5 v 4 v 3.5 v 3 v v = 2.5 v gs 5 v tc = 75? 25? ?5? v = 10 v pulse test ds drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics note 5 : when using the glass epoxy board (fr4 40x40x1.6 mm) operation in this area is limited by r ds(on) pulse test note5 dc operation (pw < 10 s) 0.5 0.4 0.3 0.2 0.1 0 gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage pulse test i = 5 a d 1 a 2 a 246810 ta = 25? 1 shot pulse 1 drive operation
HAT3004R 6 main characteristics (n channel) 0.5 0.2 0.05 0.1 0.02 1 0.01 0.2 0.5 1 2 5 10 20 0.20 0.16 0.12 0.08 0.04 ?0 0 40 80 120 160 0 0.2 0.5 1 2 5 10 20 5 2 0.5 1 0.2 10 0.1 20 25 ? tc = ?5 ? 75 ? ds v = 10 v pulse test drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc (?) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current drain current i (a) d pulse test pulse test i = 5 a d 1 a, 2 a, 5 a v = 4 v gs 10 v 2 a 1 a 0.2 0.5 1 2 5 10 0.1 500 200 100 20 50 10 5 di/dt = 20 a/? v = 0, ta = 25? gs reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time
HAT3004R 7 main characteristics (n channel) 01020304050 1000 200 100 20 10 50 40 30 20 10 0 20 16 12 8 4 246810 0 10 0.2 0.5 1 2 5 10 0.1 500 200 100 20 50 5 500 50 ciss coss crss v = 0 f = 1 mhz gs v gs v ds i = 5.5 a d v = 5 v 10 v 20 v dd v = 20 v 10 v 5 v dd v = 4 v, v = 10 v pw = 3 ?, duty < 1 % gs dd t f r t d(off) t d(on) t capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics 20 16 12 8 4 0 0.4 0.8 1.2 1.6 2.0 0, ? v v = 5 v gs source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. souece to drain voltage pulse test
HAT3004R 8 main characteristics (p channel) ?.1 ?00 ?0 ? ?.1 ?.01 ?.3 ? ? ?0 ?0 ?00 ?0 ? ?.3 ?.03 10 ? 100? pw = 10 ms 1 ms ?0 ?6 ?2 ? ? 0 ? ? ? ? ?0 v = ?.5 v gs ?0 v ? v ? v ?.5 v ? v ?0 ?6 ?2 ? ? 0 ? ? ? ? ?0 tc = ?5 ? 75 ? 25 ? ? v ? v ?.5 v drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics note 5 : when using the glass epoxy board (fr4 40x40x1.6 mm) operation in this area is limited by r ds(on) pulse test note 5 dc operation (pw < 10 s) ta = 25 ? 1 shot pulse 1 drive operation v = ?0 v pulse test ds ?.5 ?.4 ?.3 ?.2 ?.1 0 ? ? ? ? ?0 ?.5 a d i = ? a ? a gate to source voltage v (v) gs drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage pulse test
HAT3004R 9 main characteristics (p channel) 1 0.2 0.5 0.1 0.02 0.05 2 ?0 ?.2 ?.5 ? ? ? ?0 ?0 0 40 80 120 160 0.5 0.4 0.3 0.2 0.1 0 ? a, ? a, ?.5 a ?0 v 0.1 10 2 5 1 0.2 0.5 ?.2 ?.5 ? ? ? ?0 ?0 ?0 v v = ? v gs v = ? v gs ? a, ?.5 a i = ? a d tc = ?5 ? 75 ? 25 ? drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc (?) r ( ) ds(on) static drain to source on state resistance w static drain to source on state resistance vs. temperature forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current drain current i (a) d v = ?0 v pulse test ds pulse test pulse test 500 200 100 20 50 10 5 ?.2 ?.5 ? ? ? ?0 ?.1 di / dt = 20 a / ? v = 0, ta = 25 ? gs reverse drain current i (a) dr reverse recovery time trr (ns) body?rain diode reverse recovery time
HAT3004R 10 main characteristics (p channel) 0 10000 3000 1000 300 100 30 10 ?0 ?0 ?0 ?0 ?0 v = 0 f = 1 mhz gs 0 ?0 ?0 ?0 ?0 0 0 ? ? ?2 ?6 ?0 ?0 4 8 12 16 20 500 200 100 20 50 10 5 ?.2 ?.5 ? ? ? ?0 ?.1 ciss coss crss ds v gs v v = ? v ?0 v ?5 v dd dd v = ?5 v ?0 v ? v d i = ?.5 a t f r t d(off) t d(on) t v = ? v, v = ?0 v pw = 3 ?, duty < 1 % gs dd capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics drain current i (a) d switching time t (ns) switching characteristics ?0 ?6 ?2 ? ? 0 ?.4 ?.8 ?.2 ?.6 ?.0 0, 5 v v = ? v gs source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. souece to drain voltage pulse test
HAT3004R 11 4.0 3.0 2.0 1.0 0 50 100 150 200 channel dissipation pch (w) ambient temperature ta (?) power vs. temperature derating 2 drive operation 1 drive operation test condition : when using the glass epoxy board (fr4 40x40x1.6 mm), pw < 10 s
HAT3004R 12 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance vs. pulse width (2 drive operation) normalized transient thermal impedance s (t) g dm p pw t d = pw t ch ?f(t) = s (t) ? ch ?f ch ?f = 166 ?/w, ta = 25 ? q g q q when using the glass epoxy board (fr4 40x40x1.6 mm) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance vs. pulse width (1 drive operation) normalized transient thermal impedance s (t) g dm p pw t d = pw t ch ?f(t) = s (t) ? ch ?f ch ?f = 125 ?/w, ta = 25 ? q g q q when using the glass epoxy board (fr4 40x40x1.6 mm)
HAT3004R 13 vin monitor d.u.t. vin ? v r l v = ?0 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 4 v r l v = 10 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit switching time waveform n channel p channel
HAT3004R 14 package dimensions hitachi code jedec eiaj mass (reference value) fp-8da conforms 0.085 g *dimension including the plating thickness base material dimension 1.75 max 4.90 0.25 0.15 0 ?8 m 8 5 1 4 1.27 3.95 0.40 0.06 *0.42 0.08 5.3 max 0.75 max 0.14 + 0.11 ?0.04 0.20 0.03 *0.22 0.03 0.60 + 0.67 ?0.20 6.10 + 0.10 ?0.30 1.08 as of january, 2001 unit: mm
HAT3004R 15 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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